Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
Schlipf J, Martin E, Stchakovsky M, Benedetti A, Fischer IA, Schulze J, Chiussi S (2019)
Publication Type: Journal article
Publication year: 2019
Journal
Book Volume: 37
Article Number: 061213
Journal Issue: 6
DOI: 10.1116/1.5122777
Abstract
The authors report a novel approach to analyze the behavior of pulsed-laser-induced epitaxy on group-IV semiconductors by spectroscopic ellipsometry measurements and finite-element modeling of the thermo- and hydrodynamic behavior. Gradient-composition epitaxial crystals are obtained from previously atomically sharp heteroepitaxial samples through optically monitored processing with UV excimer laser pulses. Spectroscopic ellipsometry is employed to determine the composition gradient of the semiconductor alloy, and the results are correlated with energy-dispersive x-ray measurements. A finite-element modeling approach is developed based on the experimentally monitored melting dynamics and composition gradient results for understanding and prediction of the dynamics.
Authors with CRIS profile
Involved external institutions
University of Vigo / Universidade de Vigo
Spain (ES)
HORIBA Jobin Yvon SAS
France (FR)
Universität Stuttgart
Germany (DE)
Spain (ES)
HORIBA Jobin Yvon SAS
France (FR)
Universität Stuttgart
Germany (DE)
How to cite
APA:
Schlipf, J., Martin, E., Stchakovsky, M., Benedetti, A., Fischer, I.A., Schulze, J., & Chiussi, S. (2019). Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 37(6). https://doi.org/10.1116/1.5122777
MLA:
Schlipf, Jon, et al. "Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 37.6 (2019).
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