Weak localization and weak antilocalization in doped Ge1-y Sny layers with up to 8% Sn

Weisshaupt D, Funk HS, Kern M, Dettling MM, Schwarz D, Oehme M, Suergers C, Van Slageren J, Fischer IA, Schulze J (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Journal of Physics: Condensed Matter Institute of Physics: Hybrid Open Access

Book Volume: 33

Article Number: 085703

Journal Issue: 8

DOI: 10.1088/1361-648X/abcb68

Abstract

Low-temperature magnetoresistance measurements of n- and p-doped germanium-tin (Ge1-y Sn y ) layers with Sn concentrations up to 8% show contributions arising from effects of weak localization for n-type and weak antilocalization for p-type doped samples independent of the Sn concentration. Calculations of the magnetoresistance using the Hikami-Larkin-Nagaoka model for two-dimensional transport allow us to extract the phase-coherence length for all samples as well as the spin-orbit length for the p-type doped samples. For pure Ge, we find phase-coherence lengths as long as (349.0 ± 1.4) nm and (614.0 ± 0.9) nm for n-type and p-type doped samples, respectively. The phase-coherence length decreases with increasing Sn concentration. From the spin-orbit scattering length, we determine the spin-diffusion scattering length in the range of 20-30 nm for all highly degenerate p-type doped samples irrespective of Sn concentration. These results show that Ge1-y Sn y is a promising material for future spintronic applications.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE) Karlsruhe Institute of Technology (KIT) DE Germany (DE) Brandenburgische Technische Universität Cottbus-Senftenberg (BTU) DE Germany (DE)

How to cite

APA:

Weisshaupt, D., Funk, H.S., Kern, M., Dettling, M.M., Schwarz, D., Oehme, M.,... Schulze, J. (2020). Weak localization and weak antilocalization in doped Ge1-y Sny layers with up to 8% Sn. Journal of Physics: Condensed Matter, 33(8). https://doi.org/10.1088/1361-648X/abcb68

MLA:

Weisshaupt, David, et al. "Weak localization and weak antilocalization in doped Ge1-y Sny layers with up to 8% Sn." Journal of Physics: Condensed Matter 33.8 (2020).

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