Raman shifts in MBE-grown SixGex1 − − ySny alloys with large Si content

Schlipf J, Tetzner H, Spirito D, Manganelli CL, Capellini G, Huang MRS, Koch CT, Clausen CJ, Elsayed A, Oehme M, Chiussi S, Schulze J, Fischer IA (2021)

Publication Type: Journal article

Publication year: 2021

Journal

Journal of Raman Spectroscopy Wiley-Blackwell

Book Volume: 52

Pages Range: 1167-1175

Journal Issue: 6

DOI: 10.1002/jrs.6098

Abstract

We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germanium virtual substrate by molecular beam epitaxy. The Raman shifts of the three most prominent modes, Si–Si, Si–Ge, and Ge–Ge, are measured and compared with results in previous literature. We analyze and fit the dependence of the three modes on the composition and strain of the semiconductor alloys. We also demonstrate the calculation of the composition and strain of SixGe1 − x − ySny from the Raman shifts alone, based on the fitted relationships. Our analysis extends previous results to samples lattice matched on Ge and with higher Si content than in prior comprehensive Raman analyses, thus making Raman measurements as a local, fast, and nondestructive characterization technique accessible for a wider compositional range of these ternary alloys for silicon-based photonic and microelectronic devices.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Brandenburgische Technische Universität Cottbus-Senftenberg (BTU) DE Germany (DE) Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics DE Germany (DE) Humboldt-Universität zu Berlin DE Germany (DE) Universität Stuttgart DE Germany (DE) University of Vigo / Universidade de Vigo ES Spain (ES)

How to cite

APA:

Schlipf, J., Tetzner, H., Spirito, D., Manganelli, C.L., Capellini, G., Huang, M.R.S.,... Fischer, I.A. (2021). Raman shifts in MBE-grown SixGex1 − − ySny alloys with large Si content. Journal of Raman Spectroscopy, 52(6), 1167-1175. https://doi.org/10.1002/jrs.6098

MLA:

Schlipf, Jon, et al. "Raman shifts in MBE-grown SixGex1 − − ySny alloys with large Si content." Journal of Raman Spectroscopy 52.6 (2021): 1167-1175.

BibTeX: Download