GaN-based nanocolumn LEDs: Impact of strain engineering on the electro-optical performance

Veprek RG, Steiger S, Witzigmann B (2009)

Publication Type: Journal article

Publication year: 2009

Journal

Physica Status Solidi (C) Current Topics in Solid State Physics Wiley - V C H Verlag GmbbH & Co.

Book Volume: 6

Pages Range: S506-S509

Journal Issue: SUPPL. 2

DOI: 10.1002/pssc.200880762

Abstract

A computation of the electronic properties of GaN nanocolumn LEDs with optically active InGaN quantum disks is presented. Using the simulation framework AQUA/tdkp, the relaxation of intrinsic strains in the selected 3D structure and its effects on the built-in piezoelectric potential and strain dependent bandedge shifts are computed. The results show a strong relaxation of the compressive strains in the InGaN quantum disk compared to usual broad area grown structures suggesting that lower wavelength emission can be achieved at considerable lower indium contents. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Eidgenössische Technische Hochschule Zürich (ETHZ) / Swiss Federal Institute of Technology in Zurich CH Switzerland (CH)

How to cite

APA:

Veprek, R.G., Steiger, S., & Witzigmann, B. (2009). GaN-based nanocolumn LEDs: Impact of strain engineering on the electro-optical performance. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2), S506-S509. https://doi.org/10.1002/pssc.200880762

MLA:

Veprek, Ratko G., Sebastian Steiger, and Bernd Witzigmann. "GaN-based nanocolumn LEDs: Impact of strain engineering on the electro-optical performance." Physica Status Solidi (C) Current Topics in Solid State Physics 6.SUPPL. 2 (2009): S506-S509.

BibTeX: Download