Deppner M, Römer F, Witzigmann B, Ledig J, Neumann R, Waag A, Bergbauer W, Strassburg M (2011)
Publication Type: Conference contribution
Publication year: 2011
Conference Proceedings Title: IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition
Event location: DEU
ISBN: 9781457704291
We report on the computational analysis of a core-shell GaN/InGaN nanowire LED with a capped pyramidal top. The active region consists of a polar multi quantum well (MQW) at the top, a non-polar MQW along the lateral face and a semi-polar one joining them. Differences in the opto-electronic characteristics of the three crystal orientations can be examined, arising from polarization effects as well as the strain-induced bandedge shift. Furthermore the influence of carrier injection efficiency in a nanowire is investigated. © 2011 IEEE.
APA:
Deppner, M., Römer, F., Witzigmann, B., Ledig, J., Neumann, R., Waag, A.,... Strassburg, M. (2011). Computational study of carrier injection in III-nitride core-shell nanowire-LEDs. In IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition. DEU.
MLA:
Deppner, Marcus, et al. "Computational study of carrier injection in III-nitride core-shell nanowire-LEDs." Proceedings of the 2011 IEEE Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011, DEU 2011.
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