Dolgos D, Schenk A, Witzigmann B (2012)
Publication Type: Journal article
Publication year: 2012
Book Volume: 111
Article Number: 073714
Journal Issue: 7
DOI: 10.1063/1.3699313
The inclusion of momentum conservation and the evaluation of the double Coulomb transition matrix elements render the calculation of the impact ionization scattering rates with first principle approaches computationally expensive and their numerical implementation laborious. Despite the positive assessment of Kane's random-k approximation, the impact ionization rates and the secondary carrier energies for the III-V semiconductors GaAs, InP, In
APA:
Dolgos, D., Schenk, A., & Witzigmann, B. (2012). Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs. Journal of Applied Physics, 111(7). https://doi.org/10.1063/1.3699313
MLA:
Dolgos, Denis, Andreas Schenk, and Bernd Witzigmann. "Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs." Journal of Applied Physics 111.7 (2012).
BibTeX: Download