Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs

Dolgos D, Meier H, Schenk A, Witzigmann B (2012)

Publication Type: Journal article

Publication year: 2012

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 111

Article Number: 104508

Journal Issue: 10

DOI: 10.1063/1.4717729

Abstract

We investigate the high-energy charge dynamics of electrons and holes in the multiplication process of single photon avalanche diodes. The technologically important multiplication layer materials InP and In 0.52Al 0.48As, used in near infrared photon detectors, are analyzed and compared with GaAs. We use the full-band Monte Carlo technique to solve the Boltzmann transport equation which improves the state-of-the-art treatment of high-field carrier transport in the multiplication process. As a result of the computationally efficient treatment of the scattering rates and the parallel central processing unit power of modern computer clusters, the full-band Monte Carlo calculation of the breakdown characteristics has become feasible. The breakdown probability features a steeper rise versus the reverse bias for smaller multiplication layer widths for InP, In 0.52Al 0.48As, and GaAs. Both the time to avalanche breakdown and jitter decrease with shrinking size of the multiplication region for the three examined III-V semiconductors. © 2012 American Institute of Physics.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Eidgenössische Technische Hochschule Zürich (ETHZ) / Swiss Federal Institute of Technology in Zurich

Switzerland (CH) Universität Kassel

Germany (DE)

How to cite

APA:

Dolgos, D., Meier, H., Schenk, A., & Witzigmann, B. (2012). Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs. Journal of Applied Physics, 111(10). https://doi.org/10.1063/1.4717729

MLA:

Dolgos, Denis, et al. "Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs." Journal of Applied Physics 111.10 (2012).

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