Dadgar A, Groh L, Metzner S, Neugebauer S, Blaesing J, Hempel T, Bertram F, Christen J, Krost A, Andreev Z, Witzigmann B (2013)
Publication Type: Journal article
Publication year: 2013
Book Volume: 102
Article Number: 062110
Journal Issue: 6
DOI: 10.1063/1.4793185
We report on an over 50% reduction in polarization field strength in c-axis oriented InGaN multi-quantum wells (MQW) by applying quaternary AlGaInN barrier layers with better polarization matching to InGaN than GaN barriers. With the reduction in polarization fields, a strong blue-shift in photoluminescence is observed in agreement with theoretical expectation and simulations. By gracing incidence x-ray diffraction measurements, we demonstrate that partial relaxation already occurs for GaN/InGaN MQWs. As a consequence, the requirement of higher In-content layers for green light emission is in conflict with increasing strain leading to lattice relaxation. © 2013 American Institute of Physics.
APA:
Dadgar, A., Groh, L., Metzner, S., Neugebauer, S., Blaesing, J., Hempel, T.,... Witzigmann, B. (2013). Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers. Applied Physics Letters, 102(6). https://doi.org/10.1063/1.4793185
MLA:
Dadgar, Armin, et al. "Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers." Applied Physics Letters 102.6 (2013).
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