Yu F, Yao S, Römer F, Witzigmann B, Wasisto HS, Waag A (2016)
Publication Type: Conference contribution
Publication year: 2016
Publisher: VDE Verlag GmbH
Pages Range: 167-170
Conference Proceedings Title: Mikro-Nano-Integration - 6. GMM-Workshops
ISBN: 9783800742783
A top-down fabrication approach of GaN vertical transistors through integrating vertically aligned nanowires (NWs) has been reported here. By employing wet chemical etching, NWs with smooth a-plane sidewalls as well as special mushroom-like geometry are realized. The diameter of NWs can be controlled to be as small as 50 nm and their aspect ratio can reach up to 60. A fabricated transistor, integrating 99 NWs, exhibits enhancement-mode (E-mode) operation with a threshold voltage of 1.5 V, a high on and off current ratio of 109, a small subthreshold swing of 67 mV/Dec, and a high drain current (Id) output of Id > 10 mA, indicating that such vertical GaN devices are promising for future candidate in power electronics.
APA:
Yu, F., Yao, S., Römer, F., Witzigmann, B., Wasisto, H.S., & Waag, A. (2016). Integration of wet-etched GaN nanowires for vertical power transistors. In Mikro-Nano-Integration - 6. GMM-Workshops (pp. 167-170). Duisburg, DE: VDE Verlag GmbH.
MLA:
Yu, Feng, et al. "Integration of wet-etched GaN nanowires for vertical power transistors." Proceedings of the 6. GMM-Workshops Mikro-Nano-Integration - 6th GMM Workshop on Micro-Nano-Integration, Duisburg VDE Verlag GmbH, 2016. 167-170.
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