Susilo N, Schilling M, Narodovitch M, Yao HH, Li X, Witzigmann B, Enslin J, Guttmann M, Roumeliotis GG, Rychetsky M, Koslow I, Wernicke T, Niermann T, Lehmann M, Kneissl M (2019)
Publication Type: Journal article
Publication year: 2019
Book Volume: 58
Article Number: SCCB08
Journal Issue: SC
Due to changes in the spontaneous and piezoelectric polarization, AlGaN/GaN heterostructures exhibit strong polarization fields at heterointerfaces. For quantum wells, the polarization fields lead to a strong band bending and a redshift of the emission wavelength, known as quantum-confined Stark effect. In this paper the polarization fields of thin AlGaN layers in a GaN matrix were determined by evaluating the changes in the depletion region width in comparison to a reference sample without heterostructure using capacitance-voltage-measurements. The polarization fields for Al
APA:
Susilo, N., Schilling, M., Narodovitch, M., Yao, H.-H., Li, X., Witzigmann, B.,... Kneissl, M. (2019). Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements. Japanese Journal of Applied Physics, 58(SC). https://doi.org/10.7567/1347-4065/ab09dd
MLA:
Susilo, Norman, et al. "Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements." Japanese Journal of Applied Physics 58.SC (2019).
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