Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors

Ruzzarin M, Meneghini M, De Santi C, Neviani A, Yu F, Strempel K, Fatahilah MF, Witzigmann B, Wasisto HS, Waag A, Meneghesso G, Zanoni E (2019)

Publication Type: Journal article

Publication year: 2019

Journal

IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 66

Pages Range: 2119-2124

Article Number: 8674788

Journal Issue: 5

DOI: 10.1109/TED.2019.2904851

Abstract

This paper investigates the degradation of vertically aligned gallium nitride (GaN) nanowire (NW) arrays submitted to gate bias stress and UV light. Based on electrical tests and simulations, we demonstrate the existence of trapping processes that depend on the applied stress voltage V{Gstress} and on the applied light during stress (wavelength, λ). We demonstrate the following original results: 1) for positive and negative V{Gstress} conditions, no significant variation in dc characteristics is observed when the samples are stressed in dark and 2) when the devices are submitted to negative V{Gstress} and to UV light, a positive variation in threshold voltage V{th}) is observed. The positive V{th}) shift is ascribed to the transfer and trapping of electrons from the gate metal to the oxide, promoted by UV light. We also evaluated the temperature dependence of the threshold voltage shift under UV light. We demonstrated an increased trapping at higher temperatures, indicating a role of thermionic processes in electron trapping. On the other hand, detrapping from oxide states proceeds through defect-mediated conduction, i.e., is limited by the number of available states.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

University of Padua / Universita degli Studi di Padova

Italy (IT) Technische Universität Braunschweig

Germany (DE) Universität Kassel

Germany (DE)

How to cite

APA:

Ruzzarin, M., Meneghini, M., De Santi, C., Neviani, A., Yu, F., Strempel, K.,... Zanoni, E. (2019). Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors. IEEE Transactions on Electron Devices, 66(5), 2119-2124. https://doi.org/10.1109/TED.2019.2904851

MLA:

Ruzzarin, Maria, et al. "Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors." IEEE Transactions on Electron Devices 66.5 (2019): 2119-2124.

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