Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems

Perez-Bosch Quesada E, Romero-Zaliz R, Perez E, Kalishettyhalli Mahadevaiah M, Reuben JR, Schubert MA, Jimenez-Molinos F, Roldan JB, Wenger C (2021)

Publication Type: Journal article

Publication year: 2021

Journal

Electronics MDPI

Book Volume: 10

Journal Issue: 6

DOI: 10.3390/electronics10060645

Abstract

In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.

Authors with CRIS profile

John Reuben Prabahar Lehrstuhl für Informatik 3 (Rechnerarchitektur)

Involved external institutions

Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics DE Germany (DE) Universidad de Granada ES Spain (ES)

How to cite

APA:

Perez-Bosch Quesada, E., Romero-Zaliz, R., Perez, E., Kalishettyhalli Mahadevaiah, M., Reuben, J.R., Schubert, M.A.,... Wenger, C. (2021). Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems. Electronics, 10(6). https://doi.org/10.3390/electronics10060645

MLA:

Perez-Bosch Quesada, Emilio, et al. "Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems." Electronics 10.6 (2021).

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