Measuring of Dynamic On-State Resistance of GaN-HEMTs in Half-Bridge Application under Hard and Soft Switching Operation

Kohlhepp B, Kübrich D, Dürbaum T, Tannhaeuser M, Hoffmann A (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: IEEE

City/Town: NEW YORK

Conference Proceedings Title: 2019 IEEE ELECTRICAL POWER AND ENERGY CONFERENCE (EPEC)

Event location: Montreal CA

DOI: 10.1109/epec47565.2019.9074792

Authors with CRIS profile

Benedikt Kohlhepp Professur für Optoelektronik Daniel Kübrich Professur für Optoelektronik Thomas Dürbaum Professur für Elektromagnetische Felder

How to cite

APA:

Kohlhepp, B., Kübrich, D., Dürbaum, T., Tannhaeuser, M., & Hoffmann, A. (2019). Measuring of Dynamic On-State Resistance of GaN-HEMTs in Half-Bridge Application under Hard and Soft Switching Operation. In 2019 IEEE ELECTRICAL POWER AND ENERGY CONFERENCE (EPEC). Montreal, CA: NEW YORK: IEEE.

MLA:

Kohlhepp, Benedikt, et al. "Measuring of Dynamic On-State Resistance of GaN-HEMTs in Half-Bridge Application under Hard and Soft Switching Operation." Proceedings of the IEEE Electrical Power and Energy Conference (EPEC), Montreal NEW YORK: IEEE, 2019.

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