Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC

Hellinger C, Rusch O, Rommel M, Bauer AJ, Erlbacher T (2020)

Publication Type: Conference contribution

Publication year: 2020

Pages Range: 718-724

Conference Proceedings Title: Materials Science Forum

ISBN: 9783035715798

DOI: 10.4028/www.scientific.net/MSF.1004.718

Abstract

In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO 4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.

Authors with CRIS profile

Carsten Hellinger Lehrstuhl für Elektronische Bauelemente Oleg Rusch Lehrstuhl für Elektronische Bauelemente Tobias Erlbacher Technische Fakultät

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Germany (DE)

How to cite

APA:

Hellinger, C., Rusch, O., Rommel, M., Bauer, A.J., & Erlbacher, T. (2020). Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC. In Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Eds.), Materials Science Forum (pp. 718-724).

MLA:

Hellinger, Carsten, et al. "Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC." Proceedings of the Materials Science Forum Ed. Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka, 2020. 718-724.

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