Rusch O, Hellinger C, Moult J, Corcoran Y, Erlbacher T (2020)
Publication Type: Conference contribution
Publication year: 2020
Publisher: Trans Tech Publications Ltd
Book Volume: 1004 MSF
Pages Range: 155-160
Conference Proceedings Title: Materials Science Forum
ISBN: 9783035715798
DOI: 10.4028/www.scientific.net/MSF.1004.155
This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4H-SiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improving its forward characteristics. The given devices exhibit an on-state voltage drop (VF) reduction from 1.78 V to 1.62 V at 6 A rated current while maintaining blocking capabilities of more than 1.1 kV with leakage currents less than 1 µA at 650 V nominal voltage. On-resistance (RON) was lowered by approx. 30 % to 90 mΩ and 60 % to 12 mΩ in Schottky and conductivity modulation state, respectively. Wafer thinning also allows reducing the influence of non-homogeneous distributed substrate doping concentrations, leading to a more narrow distribution of the forward characteristics of the devices across the wafer.
APA:
Rusch, O., Hellinger, C., Moult, J., Corcoran, Y., & Erlbacher, T. (2020). Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology. In Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Eds.), Materials Science Forum (pp. 155-160). Kyoto, JP: Trans Tech Publications Ltd.
MLA:
Rusch, Oleg, et al. "Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology." Proceedings of the 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019, Kyoto Ed. Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka, Trans Tech Publications Ltd, 2020. 155-160.
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