Zhao D, Letz S, Schletz A, März M (2020)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2020
ISBN: 978-3-8007-5225-6
The adhesion strength of thin films on the substrate, as one of the most
important mechanical properties, decides not only the performance of
microelectronics assemblies, but also their durability and longevity in a
critical manner. In this paper, a recently developed method to characterize
interfacial properties, the cross-sectional nanoindentation (CSN), will be
employed to measure the adhesion strength of the thin films on Si substrate quantitatively.
By measuring the geometric properties of the interfacial crack and computing
the corresponding strain energy release rate, the adhesion strength of thin
film and their degradation during thermal cycling test (TCT) will be assessed.
APA:
Zhao, D., Letz, S., Schletz, A., & März, M. (2020). A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test. In IEEE (Eds.), Proceedings of the 2020 CIPS. Berlin, DE.
MLA:
Zhao, Dawei, et al. "A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test." Proceedings of the 2020 CIPS, Berlin Ed. IEEE, 2020.
BibTeX: Download