Bogner A, Timme HJ, Bauder R, Mutzbauer A, Pichler D, Krenzer M, Reccius C, Weigel R, Hagelauer AM (2019)
Publication Type: Conference contribution
Publication year: 2019
Publisher: IEEE Computer Society
Book Volume: 2019-October
Pages Range: 706-709
Conference Proceedings Title: IEEE International Ultrasonics Symposium, IUS
ISBN: 9781728145969
DOI: 10.1109/ULTSYM.2019.8925777
Applications using BAW devices benefit from large intrinsic electromechanical coupling materials, e.g. Al1-xScxN. This work reports BAW-SMRs using high piezoelectric Al1-xScxN and investigates the relations between Sc content, crystal morphology and resonator RF performance. Finally, key requirements for high quality Al1-xScxN thin-film growth are analyzed and discussed examplary for x = 20at.-%.
APA:
Bogner, A., Timme, H.J., Bauder, R., Mutzbauer, A., Pichler, D., Krenzer, M.,... Hagelauer, A.M. (2019). Impact of High Sc Content on Crystal Morphology and RF Performance of Sputtered Al1-xScxN SMR BAW. In IEEE International Ultrasonics Symposium, IUS (pp. 706-709). Glasgow, GB: IEEE Computer Society.
MLA:
Bogner, Andreas, et al. "Impact of High Sc Content on Crystal Morphology and RF Performance of Sputtered Al1-xScxN SMR BAW." Proceedings of the 2019 IEEE International Ultrasonics Symposium, IUS 2019, Glasgow IEEE Computer Society, 2019. 706-709.
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