Influence of accurate electron drift velocity modelling on the electrical characteristics in gan-on-si hemts
Reiser K, Twynam J, Eckl C, Brech H, Weigel R (2019)
Publication Type: Conference contribution
Publication year: 2019
Publisher: Institute of Electrical and Electronics Engineers Inc.
Book Volume: 2019-September
Conference Proceedings Title: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Event location: Udine
ISBN: 9781728109404
DOI: 10.1109/SISPAD.2019.8870417
Abstract
The influence of an accurate electron velocity-field relationship modelling on pulsed IV and small-signal RF characteristics in GaN-on-Si HEMTs is discussed and compared to measurements. We show by technology computer-Aided design (TCAD) simulation and measurements that not only the lowfield mobility and saturation velocity are of great importance, but also the transition behaviour in between has to be modelled accurately. Experimentally, we extract the velocity-field relationship using device simulation and measured data with ultra short pulse lengths. To the best of our knowledge, this is the first study on the velocity-field relationship in GaN-on-Si devices.
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Germany (DE)How to cite
APA:
Reiser, K., Twynam, J., Eckl, C., Brech, H., & Weigel, R. (2019). Influence of accurate electron drift velocity modelling on the electrical characteristics in gan-on-si hemts. In Francesco Driussi (Eds.), International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Udine, IT: Institute of Electrical and Electronics Engineers Inc..
MLA:
Reiser, Korbinian, et al. "Influence of accurate electron drift velocity modelling on the electrical characteristics in gan-on-si hemts." Proceedings of the 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Udine Ed. Francesco Driussi, Institute of Electrical and Electronics Engineers Inc., 2019.
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