Rasinger F, Hauck M, Rescher G, Aichinger T, Weber HB, Krieger M, Pobegen G (2019)
Publication Type: Journal article
Publication year: 2019
Book Volume: 115
Pages Range: 152102
Issue: 15
DOI: 10.1063/1.5117829
APA:
Rasinger, F., Hauck, M., Rescher, G., Aichinger, T., Weber, H.B., Krieger, M., & Pobegen, G. (2019). On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs. Applied Physics Letters, 115, 152102. https://doi.org/10.1063/1.5117829
MLA:
Rasinger, Fabian, et al. "On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs." Applied Physics Letters 115 (2019): 152102.
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