Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures

Di Benedetto L, Matthus C, Erlbacher T, Bauer AJ, Licciardo GD, Rubino A, Frey L (2019)

Publication Type: Conference contribution

Publication year: 2019

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 963 MSF

Pages Range: 572-575

Conference Proceedings Title: Materials Science Forum

Event location: Birmingham GB

ISBN: 9783035713329

DOI: 10.4028/www.scientific.net/MSF.963.572

Abstract

In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyond 273K. The sensor is measured from 150K to 445K covering a temperature range of 295K. In this operating temperature range, the sensor characteristic VD-T is highly linear and it is dominated by the typical dependence of the p-i-n diode voltage on the temperature. The sensor sensitivity is-4.48mV/K for a diode current of 2nA with a maximum error of 4.3K across the full temperature range. Although 4H-SiC p-i-n are mainly focused on very high temperature applications, our analysis on the performance of bipolar diodes at low temperatures highlights its feasibility as temperature sensor for aerospace and high altitude applications where cryogenic temperatures are achieved.

Authors with CRIS profile

Christian Matthus Lehrstuhl für Elektronische Bauelemente Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Università degli Studi di Salerno IT Italy (IT) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Di Benedetto, L., Matthus, C., Erlbacher, T., Bauer, A.J., Licciardo, G.D., Rubino, A., & Frey, L. (2019). Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 572-575). Birmingham, GB: Trans Tech Publications Ltd.

MLA:

Di Benedetto, L., et al. "Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 572-575.

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