Deep electronic levels in n-type and p-type 3C-SiC

Schöler M, Lederer M, Wellmann P (2019)


Publication Type: Journal article, Original article

Publication year: 2019

Journal

Publisher: Trans Tech Publications Ltd

Book Volume: 963

Pages Range: 297-300

Conference Proceedings Title: Materials Science Forum

Event location: Birmingham GB

ISBN: 9783035713329

DOI: 10.4028/www.scientific.net/MSF.963.297

Abstract

In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of VSi, VC and VCCSi related defects which might be suitable candidates for future optoelectronic applications.

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How to cite

APA:

Schöler, M., Lederer, M., & Wellmann, P. (2019). Deep electronic levels in n-type and p-type 3C-SiC. Materials Science Forum, 963, 297-300. https://doi.org/10.4028/www.scientific.net/MSF.963.297

MLA:

Schöler, Michael, Maximilian Lederer, and Peter Wellmann. "Deep electronic levels in n-type and p-type 3C-SiC." Materials Science Forum 963 (2019): 297-300.

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