3D simulation of silicon-based single-electron transistors

Klüpfel F, Pichler P (2017)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2017

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 77-80

Article Number: 8085268

Event location: Kamakura JP

ISBN: 9784863486102

DOI: 10.23919/SISPAD.2017.8085268

Authors with CRIS profile

Peter Pichler Technische Fakultät

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Klüpfel, F., & Pichler, P. (2017). 3D simulation of silicon-based single-electron transistors. In Proceedings of the 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (pp. 77-80). Kamakura, JP: Institute of Electrical and Electronics Engineers Inc..

MLA:

Klüpfel, Fabian, and Peter Pichler. "3D simulation of silicon-based single-electron transistors." Proceedings of the 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, Kamakura Institute of Electrical and Electronics Engineers Inc., 2017. 77-80.

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