Félix R, Witte W, Hariskos D, Paetel S, Powalla M, Lozac'h M, Ueda S, Sumiya M, Yoshikawa H, Kobayashi K, Yang W, Wilks RG, Bär M (2019)
Publication Type: Journal article
Publication year: 2019
The chemical and electronic structures in the near-surface region of Cu(In,Ga)Se2 thin-film solar cell absorbers are investigated using nondestructive soft and hard X-ray photoelectron spectroscopy. In addition to a pronounced surface Cu-depletion, the [Ga]/([In]+[Ga]) composition indicates that the topmost surface is Ga-poor (or In-rich). For the studied depth region, common depth profiling techniques generally fail to provide reliable information and, thus, the near-surface chemical and electronic structure profiles are often overlooked. The relation between the observed near-surface elemental compositions and the derived electronic properties of the absorber material is discussed. It is found that the surface band gap energy crucially depends on the Cu-deficiency of the absorber surface and suggests that it is, in this region, only secondarily determined by the [Ga]/([In]+[Ga]) ratio.
APA:
Félix, R., Witte, W., Hariskos, D., Paetel, S., Powalla, M., Lozac'h, M.,... Bär, M. (2019). Near-Surface [Ga]/([In]+[Ga]) Composition in Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers: An Overlooked Material Feature. physica status solidi (a). https://doi.org/10.1002/pssa.201800856
MLA:
Félix, Roberto, et al. "Near-Surface [Ga]/([In]+[Ga]) Composition in Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers: An Overlooked Material Feature." physica status solidi (a) (2019).
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