Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes

Rasinger F, Prohinig J, Schulze H, Schulze HJ, Pobegen G (2019)

Publication Type: Journal article

Publication year: 2019

Journal

physica status solidi (a) Wiley

Article Number: 1900197

DOI: 10.1002/pssa.201900197

Abstract

A sophisticated way to adjust the minority carrier lifetime and, therefore, the reverse recovery charge in silicon (Si) power diodes is doping with platinum (Pt), as deep levels within the silicon bandgap are created. However, additional deep levels are introduced by hydrogen-incorporating processes during the fabrication of these diodes, which are caused by platinum–hydrogen (Pt–H) defects. Herein, the focus is on how Pt–H defects influence the p+/n− diode characteristics at reverse biasing and verify that annealing at temperatures higher than 300 K decreases the concentration of these defects to a minimum. The dissociation energy of this annealing process is obtained by assuming a first-order reaction. Furthermore, depth profiles of the Pt–H defect are calculated via current–voltage (IV) characteristics. Not only the impact of the Pt–H defect on the device performance is in a reverse direction but also its controllability via thermal annealing in a conventional furnace is presented.

Involved external institutions

Infineon Technologies AG DE Germany (DE) Kompetenzzentrum Automobil- und Industrie-Elektronik GmbH AT Austria (AT) Infineon Technologies Austria AG AT Austria (AT)

How to cite

APA:

Rasinger, F., Prohinig, J., Schulze, H., Schulze, H.J., & Pobegen, G. (2019). Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes. physica status solidi (a). https://doi.org/10.1002/pssa.201900197

MLA:

Rasinger, Fabian, et al. "Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes." physica status solidi (a) (2019).

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