Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides

Jank M, Lemberger M, Frey L, Ryssel H (2000)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2000

Pages Range: 103-106

Article Number: 924101

Event location: Alpbach

ISBN: 0780364627

DOI: 10.1109/IIT.2000.924101

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

How to cite

APA:

Jank, M., Lemberger, M., Frey, L., & Ryssel, H. (2000). Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides. In Proceedings of the 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (pp. 103-106). Alpbach.

MLA:

Jank, Michael, et al. "Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides." Proceedings of the 2000 13th International Conference on Ion Implantation Technology, IIT 2000, Alpbach 2000. 103-106.

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