Bauer A, Mayer P, Frey L, Haeublein V, Ryssel H (1999)
Publication Status: Published
Publication Type: Conference contribution, Conference Contribution
Publication year: 1999
Publisher: IEEE
City/Town: Piscataway, NJ, United States
Book Volume: 1
Pages Range: 26-29
Conference Proceedings Title: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
Event location: Kyoto, Jpn
ISBN: 078034538X
URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033338246&origin=inward
APA:
Bauer, A., Mayer, P., Frey, L., Haeublein, V., & Ryssel, H. (1999). Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO. In Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) (pp. 26-29). Kyoto, Jpn: Piscataway, NJ, United States: IEEE.
MLA:
Bauer, Anton, et al. "Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO." Proceedings of the Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98), Kyoto, Jpn Piscataway, NJ, United States: IEEE, 1999. 26-29.
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