Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process

Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A (2001)

Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2001

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publ

Edited Volumes: Materials Science Forum

City/Town: Uetikon-Zuerich, Switzerland

Book Volume: 225

Pages Range: 353-356

Conference Proceedings Title: Materials Science Forum

Event location: Kloster Banz

URI: http://www.scientific.net/MSF.353-356.11

DOI: 10.4028/www.scientific.net/MSF.353-356.11

Abstract

We have studied the impact of morphological changes of the source material during physical vapor transport growth of silicon carbide (SiC). Digital X-ray imaging was carried out to visualize the ongoing processes inside the SiC source material and numerical modeling was performed in order to study the impact on the crystal growth process. According to numerical modeling there is a large impact of the SiC powder compression and morphology on the global heat transfer and mass transfer inside the growth cell. Two different SiC sources containing microscopic SiC powder and macroscopic SiC pieces, respectively, were investigated. Although the SiC source material undergoes fundamental transitions during growth (i.e. evolution from powder to compressed SiC block) it was found that self-stabilizing of the growth process occurred by formation of a disk-like structure on the top of the source material, independent of the initial source morphology. The experimental results were confirmed by the numerical simulation of the global growth process

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Albrecht Winnacker Technische Fakultät

How to cite

APA:

Wellmann, P., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2001). Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process. Materials Science Forum, 225, 353-356. https://doi.org/10.4028/www.scientific.net/MSF.353-356.11

MLA:

Wellmann, Peter, et al. "Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process." Materials Science Forum 225 (2001): 353-356.

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