Fet A, Haeublein V, Bauer AJ, Ryssel H, Frey L (2010)
Publication Type: Journal article
Publication year: 2010
Book Volume: 107
Article Number: 124514
Journal Issue: 12
DOI: 10.1063/1.3391280
This paper discusses the effective work function instability in high-\textgreekk-based MOS gate stacks, which occurs after high temperature (1070 °C) processing. Theories which have been put forward to explain this effect are discussed and unified to a consistent phenomenological model. The Vfb roll-off effect is also discussed and can be described by the model.
APA:
Fet, A., Haeublein, V., Bauer, A.J., Ryssel, H., & Frey, L. (2010). Modeling of the effective work function instability in metal/high-κ dielectric stacks. Journal of Applied Physics, 107(12). https://doi.org/10.1063/1.3391280
MLA:
Fet, A., et al. "Modeling of the effective work function instability in metal/high-κ dielectric stacks." Journal of Applied Physics 107.12 (2010).
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