Mai T, Hagelauer AM, Weigel R (2018)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2018
Pages Range: 4
Event location: Graz University of Technology
DOI: 10.1109/austrochip.2018.8520714
A novel self-adjusting biasing technique for current sources in CMOS operational
amplifiers is presented.
The method is deduced from the fundamental characteristics of a mosfet and a simple line of reasoning.
Opamps using this technique can produce a more constant gain over process corners
and temperature. This is especially important under
large-signal conditions, when the output
is near one of the supply rails or a large current needs to be driven.
Therefore it reduces worst case distortion in a given Opamp circuit that uses feedback
over temperature and process corners.
It is also capable of driving low-$V_t$-devices that typically exhibit less noise, increasing
the achievable noise performance of the Opamp almost without additional current consumption.
The method was implemented and simulated in tsmc 180\,nm CMOS.
Simulation results are presented that clearly show the increased performance compared
to the state of the art.
APA:
Mai, T., Hagelauer, A.M., & Weigel, R. (2018). Maximizing Temperature and Process Corner Performance of Operational Amplifiers with a Novel Self-Adjusting Biasing Technique. In Proceedings of the Austrian Workshop on Microelectronics (pp. 4). Graz University of Technology.
MLA:
Mai, Timo, Amelie Marietta Hagelauer, and Robert Weigel. "Maximizing Temperature and Process Corner Performance of Operational Amplifiers with a Novel Self-Adjusting Biasing Technique." Proceedings of the Austrian Workshop on Microelectronics, Graz University of Technology 2018. 4.
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