Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M (2018)
Publication Language: English
Publication Type: Journal article, Letter
Publication year: 2018
Book Volume: 924
Pages Range: 277-280
URI: https://www.scientific.net/MSF.924.277
DOI: 10.4028/MSF.924.277
APA:
Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280. https://doi.org/10.4028/MSF.924.277
MLA:
Rasinger, Fabian, et al. "Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs." Materials Science Forum 924 (2018): 277-280.
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