Winnacker A, Hofmann HD, Wellmann P (2000)
Publication Type: Conference contribution, Conference Contribution
Publication year: 2000
Conference Proceedings Title: Proceedings of the third Vietnam-German Workshop on Physics and Engineering
Event location: Ho Chi Minh City
APA:
Winnacker, A., Hofmann, H.-D., & Wellmann, P. (2000). Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics. In Proceedings of the third Vietnam-German Workshop on Physics and Engineering. Ho Chi Minh City, VN.
MLA:
Winnacker, Albrecht, Heinz-Dieter Hofmann, and Peter Wellmann. "Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics." Proceedings of the Third Vietnam-German Workshop on Physics and Engineering, Ho Chi Minh City 2000.
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