Burchard A, Deicher M, Forkel-Wirth D, Freidinger J, Kerle T, Magerle R, Pfeiffer W, Prost W, Wellmann P, Winnacker A (1995)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 1995
Book Volume: 196-201
Pages Range: 987-991
DOI: 10.4028/www.scientific.net/MSF.196-201.987
The formation of acceptor-hydrogen complexes has been studied in Cd doped ternary III-V compounds AlGaAs, InGaAs and GaInP. Using the perturbed gamma gamma angular correlation technique (PAC) with radioactive Cd-111m accepters, the interaction between the Cd accepters and H introduced by low energy implantation (100 eV) was examined quantitatively. The observed formation probability of Cd-H complexes and their hyperfine interaction parameters are compared with the ones observed for the binary compounds GaAs, AlAs, InAs, InP, and GaP.
APA:
Burchard, A., Deicher, M., Forkel-Wirth, D., Freidinger, J., Kerle, T., Magerle, R.,... Winnacker, A. (1995). Acceptor-hydrogen interaction in ternary III-V semiconductors. Materials Science Forum, 196-201, 987-991. https://doi.org/10.4028/www.scientific.net/MSF.196-201.987
MLA:
Burchard, A., et al. "Acceptor-hydrogen interaction in ternary III-V semiconductors." Materials Science Forum 196-201 (1995): 987-991.
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