Wellmann P, Schoenfeld W, Garcia J, Petroff P (1998)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 1998
Publisher: Minerals, Metals and Materials Society
Book Volume: 27
Pages Range: 1030-1033
Journal Issue: 9
DOI: 10.1007/s11664-998-0158-4
We report the tunability of up to 150 meV of the ground state transition of selfassembled InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of the exciton localization in the quantum dots, the photoluminescence efficiency (T = 12K) of the quantum dot transition remains at 80% of its original value after implantation with a Mn dose of 1 ´ 1013 cm–2 ions. Strong luminescence still remains at room temperature. At a high implantation dose (1 ´ 1015 cm–2) and rapid thermal annealing (700°C for 60s) about 25% of the QD luminescence intensity is recovered at T = 12K.
APA:
Wellmann, P., Schoenfeld, W., Garcia, J., & Petroff, P. (1998). Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique. Journal of Electronic Materials, 27(9), 1030-1033. https://doi.org/10.1007/s11664-998-0158-4
MLA:
Wellmann, Peter, et al. "Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique." Journal of Electronic Materials 27.9 (1998): 1030-1033.
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