Rimmelspacher J, Weigel R, Hagelauer AM, Issakov V (2019)
Publication Language: English
Publication Status: Accepted
Publication Type: Conference contribution, Conference Contribution
Future Publication Type: Conference contribution
Publication year: 2019
DOI: 10.1109/sirf.2019.8709120
This paper presents a 60 GHz dual-core push-push
VCO in a 45 nm partially depleted (PD) RF Silicon-on-Insulator (SOI) CMOS
technology. The cores are coupled inductively via differential inductors. The
best measured phase noise at 1 MHz offset from a 63 GHz carrier is
−94.4 dBc/Hz. The wideband continuous frequency-tuning-range (FTR) is 16 %.
The DC power dissipation is 76 mW including fundamental 30 GHz and
second harmonic (H2) 60 GHz output buffers at 1 V power supply
voltage. The measurement results of a reference single-core VCO design proves
the relative phase noise improvement of the implemented core-coupling
technique. The chip area excluding pads is 0.09 mm2.
APA:
Rimmelspacher, J., Weigel, R., Hagelauer, A.M., & Issakov, V. (2019). LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. In Proceedings of the Radio & Wireless Week (RWW): Silicon Monolithic Inegrated Circuits in RF Systems (SiRF). Orlando, FL, US.
MLA:
Rimmelspacher, Johannes, et al. "LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology." Proceedings of the Radio & Wireless Week (RWW): Silicon Monolithic Inegrated Circuits in RF Systems (SiRF), Orlando, FL 2019.
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