Nishizawa SI, Wellmann P, Pons M (2006)
Publication Language: English
Publication Type: Book chapter / Article in edited volumes
Publication year: 2006
Publisher: Transworld Research Network
Edited Volumes: Wide Band Gap Materials and New Developments
City/Town: India
Pages Range: 69-89
APA:
Nishizawa, S.-I., Wellmann, P., & Pons, M. (2006). SiC epitaxial structure growth: evaluation and modeling. In M. Syväjärvi and R. Yakimova (Eds.), Wide Band Gap Materials and New Developments. (pp. 69-89). India: Transworld Research Network.
MLA:
Nishizawa, Shin-Ichi, Peter Wellmann, and Michel Pons. "SiC epitaxial structure growth: evaluation and modeling." Wide Band Gap Materials and New Developments. Ed. M. Syväjärvi and R. Yakimova, India: Transworld Research Network, 2006. 69-89.
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