Biglari M, Lieske T, Fey D (2018)
Publication Type: Conference contribution, Original article
Publication year: 2018
Publisher: ACM
City/Town: New York, NY, USA
Pages Range: 19 - 24
Conference Proceedings Title: Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures
Event location: Athens, Greece
ISBN: 978-1-4503-5815-6
URI: http://doi.acm.org/10.1145/3232195.3232217
APA:
Biglari, M., Lieske, T., & Fey, D. (2018). High-Endurance Bipolar ReRAM-Based Non-Volatile Flip-Flops with Run-Time Tunable Resistive States. In Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures (pp. 19 - 24). Athens, Greece: New York, NY, USA: ACM.
MLA:
Biglari, Mehrdad, Tobias Lieske, and Dietmar Fey. "High-Endurance Bipolar ReRAM-Based Non-Volatile Flip-Flops with Run-Time Tunable Resistive States." Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, Athens, Greece New York, NY, USA: ACM, 2018. 19 - 24.
BibTeX: Download