Roll G, Jakschik S, Goldmann M, Wachowiak A, Mikolajick T, Frey L (2012)
Publication Status: Published
Publication Type: Conference contribution, Conference Contribution
Publication year: 2012
Article Number: 6210165
Event location: Hsinchu
ISBN: 9781457720840
DOI: 10.1109/VLSI-TSA.2012.6210165
APA:
Roll, G., Jakschik, S., Goldmann, M., Wachowiak, A., Mikolajick, T., & Frey, L. (2012). Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation. In Proceedings of the 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012. Hsinchu.
MLA:
Roll, Guntrade, et al. "Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation." Proceedings of the 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012, Hsinchu 2012.
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