Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications

Daves W, Krauss A, Häublein V, Bauer A, Frey L (2011)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2011

Pages Range: 108-114

Event location: Oxford

ISBN: 0930815939

URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-84876889044∨igin=inward

Authors with CRIS profile

Walter Daves Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Daves, W., Krauss, A., Häublein, V., Bauer, A., & Frey, L. (2011). Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications. In Proceedings of the 2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011 (pp. 108-114). Oxford.

MLA:

Daves, Walter, et al. "Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications." Proceedings of the 2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011, Oxford 2011. 108-114.

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