Quantum transport in molecular nanowires transistors
Roth S, Burghard M, Krstic V, Liu K, Muster J, Philipp G, Kim GT, Park Jg, Park Y (2001)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2001
Journal
Book Volume: 1
Pages Range: 56-60
Journal Issue: 1
DOI: 10.1016/S1567-1739(00)00011-0
Abstract
Nanotube-based field effect transistors can be prepared by laying carbon nanotubes over electrolithographically deposited gold electrodes on silicon chips. These devices can be used to study the physical properties of the nanotubes and to investigate the electrical behaviour of the contacts between the electrodes and the tubes. From the experience with these devices technologies of chemical self-assembly can be developed which will allow for integration densities higher than achievable by purely lithographic means.
Authors with CRIS profile
Involved external institutions
Korea University
Korea, Republic of (KR)
Max-Planck-Institut für Festkörperforschung
Germany (DE)
Seoul National University (SNU) / 서울대학교
Korea, Republic of (KR)
IBM Thomas J. Watson Research Center
United States (USA) (US)
Korea, Republic of (KR)
Max-Planck-Institut für Festkörperforschung
Germany (DE)
Seoul National University (SNU) / 서울대학교
Korea, Republic of (KR)
IBM Thomas J. Watson Research Center
United States (USA) (US)
How to cite
APA:
Roth, S., Burghard, M., Krstic, V., Liu, K., Muster, J., Philipp, G.,... Park, Y. (2001). Quantum transport in molecular nanowires transistors. Current Applied Physics, 1(1), 56-60. https://doi.org/10.1016/S1567-1739(00)00011-0
MLA:
Roth, Siegmar, et al. "Quantum transport in molecular nanowires transistors." Current Applied Physics 1.1 (2001): 56-60.
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