Growth and electrical transport of germanium nanowires

Gu G, Burghard M, Kim G, Duesberg GS, Chiu P, Krstic V, Roth S, Han W (2001)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2001

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 90

Pages Range: 5747-5751

Journal Issue: 11

DOI: 10.1063/1.1413495

Abstract

Single crystalline germanium nanowires have been synthesized from gold nanoparticles based on a vapor–liquid–solid growth mechanism. Germanium powder was evaporated at 950 °C, and deposited onto gold nanoparticles at 500 °C using argon as a carrier gas. The diameter of the germanium nanowires ranged from 20 to 180 nm when gold thin films were utilized as the substrate, while the nanowires grown from 10 nm Au particles showed a narrower diameter distribution centered at 28 nm. The growth direction of germanium nanowires is along the [111] direction, determined by high resolution transmission electron microscopy. Transport measurements on individual Ge nanowires indicate that the wires are heavily doped during growth and that transport data can be explained by the thermal fluctuation tunneling conduction model.

Authors with CRIS profile

Vojislav Krstic Professur für Angewandte Physik

Involved external institutions

Max-Planck-Institut für Festkörperforschung DE Germany (DE) University of California, Berkeley US United States (USA) (US)

How to cite

APA:

Gu, G., Burghard, M., Kim, G., Duesberg, G.S., Chiu, P., Krstic, V.,... Han, W. (2001). Growth and electrical transport of germanium nanowires. Journal of Applied Physics, 90(11), 5747-5751. https://doi.org/10.1063/1.1413495

MLA:

Gu, G., et al. "Growth and electrical transport of germanium nanowires." Journal of Applied Physics 90.11 (2001): 5747-5751.

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