Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

Park Jg, Kim G, Krstic V, Lee Sh, Kim B, Burghard M, Park Y (2001)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2001

Journal

Synthetic Metals Elsevier

Book Volume: 119

Pages Range: 469-470

DOI: 10.1016/S0379-6779(00)00744-X

Authors with CRIS profile

Vojislav Krstic Professur für Angewandte Physik

Involved external institutions

Korea University KR Korea, Republic of (KR) Max-Planck-Institut für Festkörperforschung DE Germany (DE) Incheon National University (INU) / 인천대학교 KR Korea, Republic of (KR) Seoul National University (SNU) / 서울대학교 KR Korea, Republic of (KR)

How to cite

APA:

Park, J.-g., Kim, G., Krstic, V., Lee, S.-h., Kim, B., Burghard, M., & Park, Y. (2001). Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers. Synthetic Metals, 119, 469-470. https://doi.org/10.1016/S0379-6779(00)00744-X

MLA:

Park, Jin-gyu, et al. "Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers." Synthetic Metals 119 (2001): 469-470.

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