Field-effect transistor made of individual V2O5 nanofibers

Kim G, Muster J, Krstic V, Park Y, Park Jg, Roth S, Burghard M (2000)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2000

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics Inc.

Book Volume: 76

Pages Range: 1875-1877

Journal Issue: 14

DOI: 10.1063/1.126197

Abstract

A field-effect transistor (FET) with a channel length of ∼100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5 nm×10 nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10−5 cm2/V s at T=131 K to 9.6×10−3 cm2/V s at T=192 K with an activation energy of Ea=0.18 eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼4 nm.

Authors with CRIS profile

Vojislav Krstic Professur für Angewandte Physik

Involved external institutions

Max-Planck-Institut für Festkörperforschung DE Germany (DE) Seoul National University (SNU) / 서울대학교 KR Korea, Republic of (KR) Korea University KR Korea, Republic of (KR)

How to cite

APA:

Kim, G., Muster, J., Krstic, V., Park, Y., Park, J.-g., Roth, S., & Burghard, M. (2000). Field-effect transistor made of individual V2O5 nanofibers. Applied Physics Letters, 76(14), 1875-1877. https://doi.org/10.1063/1.126197

MLA:

Kim, Gyutae, et al. "Field-effect transistor made of individual V2O5 nanofibers." Applied Physics Letters 76.14 (2000): 1875-1877.

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