Electrical transport through individual vanadium pentoxide nanowires

Muster J, Kim G, Krstic V, Park Jg, Park Y, Roth S, Burghard M (2000)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2000

Journal

Advanced Materials Wiley-VCH Verlag

Publisher: Wiley-VCH Verlag Berlin GmbH

City/Town: Weinheim, Germany

Book Volume: 12

Pages Range: 420-424

Journal Issue: 6

DOI: 10.1002/(SICI)1521-4095(200003)12:6<420::AID-ADMA420>3.0.CO;2-7

Abstract

The controlled deposition of individual V2O5 nanowires on chemically modified SiO2 substrates is reported here. Electrical transport measurements were performed on individual fibers (see Figure) and on thin fiber networks, and the conductivity of an individual V2O5 nanowire was estimated to be ∼0.5 S/cm at room temperature. The structure of the fibers was investigated using scanning force microscopy.

Authors with CRIS profile

Vojislav Krstic Professur für Angewandte Physik

Involved external institutions

Max-Planck-Institut für Festkörperforschung DE Germany (DE) Korea University KR Korea, Republic of (KR) Seoul National University (SNU) / 서울대학교 KR Korea, Republic of (KR)

How to cite

APA:

Muster, J., Kim, G., Krstic, V., Park, J.-g., Park, Y., Roth, S., & Burghard, M. (2000). Electrical transport through individual vanadium pentoxide nanowires. Advanced Materials, 12(6), 420-424. https://doi.org/10.1002/(SICI)1521-4095(200003)12:6<420::AID-ADMA420>3.0.CO;2-7

MLA:

Muster, Jörg, et al. "Electrical transport through individual vanadium pentoxide nanowires." Advanced Materials 12.6 (2000): 420-424.

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