Erlekampf J, Kaminzky D, Rosshirt K, Kallinger B, Rommel M, Berwian P, Friedrich J, Frey L (2018)
Publication Status: Published
Publication Type: Conference contribution
Publication year: 2018
Publisher: Trans Tech Publications Ltd
Pages Range: 112-115
ISBN: 9783035711455
DOI: 10.4028/www.scientific.net/MSF.924.112
APA:
Erlekampf, J., Kaminzky, D., Rosshirt, K., Kallinger, B., Rommel, M., Berwian, P.,... Frey, L. (2018). Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC. In Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 (pp. 112-115). Trans Tech Publications Ltd.
MLA:
Erlekampf, Jürgen, et al. "Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC." Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 Trans Tech Publications Ltd, 2018. 112-115.
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