Huerner A, Heckel T, Endruschat A, Erlbacher T, Bauer AJ, Frey L (2018)
Publication Status: Published
Publication Type: Conference contribution
Publication year: 2018
Publisher: Trans Tech Publications Ltd
Pages Range: 901-904
ISBN: 9783035711455
DOI: 10.4028/www.scientific.net/MSF.924.901
APA:
Huerner, A., Heckel, T., Endruschat, A., Erlbacher, T., Bauer, A.J., & Frey, L. (2018). Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs. In Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 (pp. 901-904). Trans Tech Publications Ltd.
MLA:
Huerner, A., et al. "Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs." Proceedings of the International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 Trans Tech Publications Ltd, 2018. 901-904.
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