Gyulai J, Ryssel H, Biró L, Frey L, Kuki A, Kormány T, Serfozo G, Khanh N (1994)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 1994
Book Volume: 127
Pages Range: 397-404
DOI: 10.1080/10420159408221047
Defect structure and electrical characterization of boron and arsenic implanted layers has been investigated for implantation under athermal (light) excitation. This Photon Assisted (PA) implantation owes its specific properties to an additional electric field acting on charged particles including carriers and charged defects. It was shown that in case of n-type silicon this extra field draws charged vacancies and self-interstitials towards each other and, thus, diminishes transient diffusion of boron. This effect resulted in junctions which are about 20% shallower compared to conventionally processed reference wafers. Experiments using light of an Ar-ion laser and white light of a high pressure Xe arc lamp were compared. Some deactivation of carriers in the deeper laying parts of the p-region was always a by-product.
APA:
Gyulai, J., Ryssel, H., Biró, L., Frey, L., Kuki, A., Kormány, T.,... Khanh, N. (1994). Athermal effects in ion implanted layers. Radiation Effects and Defects in Solids, 127, 397-404. https://doi.org/10.1080/10420159408221047
MLA:
Gyulai, Jozsef, et al. "Athermal effects in ion implanted layers." Radiation Effects and Defects in Solids 127 (1994): 397-404.
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