Frey L, Bogen S, Gong L, Jung W, Ryssel H, Gyulai J (1992)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 1992
Book Volume: 62
Pages Range: 410-415
Journal Issue: 3
DOI: 10.1016/0168-583X(92)95267-U
APA:
Frey, L., Bogen, S., Gong, L., Jung, W., Ryssel, H., & Gyulai, J. (1992). High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62(3), 410-415. https://doi.org/10.1016/0168-583X(92)95267-U
MLA:
Frey, Lothar, et al. "High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62.3 (1992): 410-415.
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