Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
Weingärtner R, Albrecht A, Wellmann P, Winnacker A (2003)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2003
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 433-436
Pages Range: 341-344
Conference Proceedings Title: Materials Science Forum (Volumes 433-436)
Event location: Linkoping
DOI: 10.4028/www.scientific.net/MSF.433-436.341
Abstract
The dopant concentration dependence of the zero phonon lines of the nitrogen bound excitons in n-type (N) 6H-SiC in high resolution low temperature photoluminescence spectra are investigated. The asymmetric line broadening of the zero phonon lines is interpreted in terms of overlapping wave functions. From the change of the ratio of the hexagonal zero phonon lines to the cubic zero phonon lines as a function of charge carrier concentration the capture cross sections of neutral nitrogen donors for excitons were determined to be (44.5 Angstrom)(2)pi and (33.5 Angstrom)(2)pi on hexagonal and cubic lattice site, respectively.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Weingärtner, R., Albrecht, A., Wellmann, P., & Winnacker, A. (2003). Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC. Materials Science Forum, 433-436, 341-344. https://doi.org/10.4028/www.scientific.net/MSF.433-436.341
MLA:
Weingärtner, Roland, et al. "Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC." Materials Science Forum 433-436 (2003): 341-344.
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