Hürner A, Di Benedetto L, Erlbacher T, Mitlehner H, Bauer A, Frey L (2015)
Publication Status: Published
Publication Type: Authored book, Volume of book series
Publication year: 2015
Publisher: Trans Tech Publications Ltd
Pages Range: 656-659
ISBN: 9783038354789
DOI: 10.4028/www.scientific.net/MSF.821-823.656
In this study, a robust double-ring junction-termination-extension (DR-JTE) for highvoltage pn-diodes is presented and analyzed using numerical simulations. As figured out, the DRJTE reduces the electrical field at both, the edge of the single-JTE region and the mesa-transition, respectively. Thereby, due to the reduction of the electrical field, the maximum breakdown voltage is increased to 91.5% of the theoretical, parallel-plane breakdown voltage of 6.5 kV and the maximum acceptable deviation of the optimum implantation dose is twice than that of the single- JTE structure. Furthermore, due to the internal ring, the mesa-transition is shielded from the electrical field and therefore the breakdown voltage is much less affected by the angle of the mesa.
APA:
Hürner, A., Di Benedetto, L., Erlbacher, T., Mitlehner, H., Bauer, A., & Frey, L. (2015). Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC. Trans Tech Publications Ltd.
MLA:
Hürner, Andreas, et al. Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC. Trans Tech Publications Ltd, 2015.
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