Jokubavicius V, Yazdi GR, Liljedahl R, Ivanov IG, Sun J, Liu X, Schuh P, Wilhelm M, Wellmann P, Yakimova R, Syväjärvi M (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2015
Publisher: American Chemical Society
Book Volume: 15
Pages Range: 2940-2947
We investigated the formation of structural defects in thick (similar to 1 mm) cubic silicon carbide (3C-SiC) layers grown on off-oriented 4H-SiC substrates via a lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the two-step growth process combined with a geometrically controlled lateral enlargement mechanism allows the formation of a single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution X-ray diffraction and low temperature photoluminescence measurements.
APA:
Jokubavicius, V., Yazdi, G.R., Liljedahl, R., Ivanov, I.G., Sun, J., Liu, X.,... Syväjärvi, M. (2015). Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates. Crystal Growth & Design, 15, 2940-2947. https://doi.org/10.1021/acs.cgd.5b00368
MLA:
Jokubavicius, Valdas, et al. "Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates." Crystal Growth & Design 15 (2015): 2940-2947.
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